FSYA150D datasheet(4/8 Pages) INTERSIL

部件名	FSYA150D

功能描述	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

PDF	8 Pages

Scroll/Zoom	100%

制造商	INTERSIL [Intersil Corporation]

网页	http://www.intersil.com/cda/home

标志

4 / 8 page

4-4

FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERATURE

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. BASIC GATE CHARGE WAVEFORM

FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE

FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

TC, CASE TEMPERATURE (

oC)

150

100

-50

100

VDS, DRAIN TO SOURCE VOLTAGE (V)

100

500

TC = 25

100

µs

1ms

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(ON)

300

10ms

CHARGE

QGD

QGS

12V

2.5

2.0

1.5

1.0

0.5

0.0

-80

-40

120

160

TJ, JUNCTION TEMPERATURE (

oC)

PULSE DURATION = 250ms,VGS = 12V, ID = 25A

0.1

0.01

10-5

10-4

10-3

10-2

10-1

100

101

t, RECTANGULAR PULSE DURATION (s)

0.001

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC + TC

SINGLE PULSE

PDM

0.01

0.02

0.05

0.1

0.2

0.5

FSYA150D, FSYA150R

FSYA150D 数据表(PDF) 4 Page - Intersil Corporation

FSYA150D 数据表(HTML) 4 Page - Intersil Corporation

Html Pages

1 2 3 4 5 6 7 8

数据表下载