4-1

FSYA150D, FSYA150R

Radiation Hardened, SEGR Resistant

N-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developed a

series of Radiation Hardened MOSFETs specifically

designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects

(SEE), Single Event Gate Rupture (SEGR) in particular, is

combined with 100K RADS of total dose hardness to provide

devices which are ideally suited to harsh space

environments. The dose rate and neutron tolerance

necessary for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power

field-effect transistor of the vertical DMOS (VDMOS)

structure. It is specially designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, motor drives,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Formerly available as type TA17656.

Features

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

• Dose Rate

• Photo Current

- 7.0nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications

Symbol

Packaging

SMD-1

Ordering Information

RAD LEVEL

SCREENING LEVEL

PART NUMBER/BRAND

10K

Commercial

FSYA150D1

10K

TXV

FSYA150D3

100K

Commercial

FSYA150R1

100K

TXV

FSYA150R3

100K

Space

FSYA150R4

D

G

S

Data Sheet

January 1999

File Number

4648

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207