4-117

File Number

3937.5

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

RFD8P06E, RFD8P06ESM, RFP8P06E

8A, 60V, 0.300 Ohm, P-Channel Power

MOSFETs

These are P-Channel power MOSFETs manufactured using

the MegaFET process. This process, which uses feature

sizes approaching those of LSI integrated circuits gives

optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers, relay drivers and emitter switches for bipolar

transistors. These transistors can be operated directly from

integrated circuits.

The RFD8P06E, RFD8P06ESM and RFP8P06E incorporate

ESD protection and are designed to withstand 2kV (Human

Body Model) of ESD.

Formerly developmental type TA49044.

Features

• 8A, 60V

• 2kV ESD Protected

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFP8P06E

TO-220AB

RFP8P06E

RFD8P06ESM

TO-252AA

D8P06E

RFD8P06E

TO-251AA

D8P06E

NOTE: When ordering, use the entire part number. Add the suffix 9A

to obtain the TO-252AA variant in tape and reel, i.e.

RFD8P06ESM9A.

G

D

S

JEDEC TO-220AB

JEDEC TO-251AA

JEDEC TO-252AA

GATE

DRAIN (FLANGE)

SOURCE

DRAIN

SOURCE

DRAIN (FLANGE)

GATE

DRAIN

GATE

SOURCE

DRAIN (FLANGE)

Data Sheet

July 1999