RFP8P06E datasheet(2/8 Pages) INTERSIL

2 / 8 page

4-118

Absolute Maximum Ratings TC = 25oC

RFD8P06E, RFD8P06ESM, RFP8P06E

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

-60

Drain to Gate Voltage (RGS = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

-60

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Refer to Peak Current Curve

Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Refer to UIS Curve

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.32

W/oC

Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . .ESD

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 150oC.

Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V

-60

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA

-2.0

-4.0

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

-1.0

µA

VDS = 0.8 x Rated BVDSS, TC = 150

-25

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V

±10

µA

Drain to Source On Resistance (Note 3)

rDS(ON)

ID = 8A, VGS = -10V

0.300

Ω

Turn-On Time

tON

VDD = -30V, ID ≈ 8A,

RL = 3.75Ω, VGS = -10V, RG = 2.5Ω

(Figure 13)

Turn-On Delay Time

td(ON)

-15-

Rise Time

-30-

Turn-Off Delay Time

td(OFF)

-40-

Fall Time

-25-

Turn-Off Time

tOFF

100

Total Gate Charge

Qg(TOT)

VGS = 0 to -20V

VDD = -48V, ID = 8A,

RL = 6Ω

Ig(REF) = -1.45mA

-30

Gate Charge at 5V

Qg(-10)

VGS = 0 to -10V

Threshold Gate Charge

Qg(TH)

VGS = 0 to -2V

1.15

1.5

Input Capacitance

CISS

VDS = -25V, VGS = 0V,

f = 1MHz

600

Output Capacitance

COSS

160

Reverse Transfer Capacitance

CRSS

-35-

Thermal Resistance Junction to Case

RθJC

Figure 12

3.125

oC/W

Thermal Resistance Junction to Ambient

RθJA

TO-220

oC/W

TO-251, TO-252

100

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage

VSD

ISD = -8A

-1.5

Diode Reverse Recovery Time

trr

ISD = -8A, dISD/dt = -100A/µs

125

NOTES:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

RFD8P06E, RFD8P06ESM, RFP8P06E

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