ACE302A

Low Voltage Detector with Built-in Delay Circuit

VER 1.2

3

Symbol

Parameter

Conditions

Reference data

Unit

Min.

Typ.

Max.

Detection

Voltage*1

-

−V

DET(S)

×0.98

−V

DET(S)

−V

DET(S)

×1.02

V

Hysteresis

Width

-

0.02×

−V

0.05×

−V

0.08×

−V

V

Current

Consumpti

0.5V

ACE302A C/N20~26

-

1.0

3.0

μA

ACE302A C/N26~39

-

1.2

3.2

μA

ACE302A C/N39~60

-

1.5

3.5

μA

Operating

Voltage

-

0.95

-

7

V

Output

current

NMOS: V

OUT

=0.5 V

V

0.5 V

ACE302A C/N20~26

3.0

13.0

-

mA

ACE302A C/N26~39

3.0

15.0

-

mA

ACE302A C/N39~60

3.0

18.0

-

mA

PMOS：

V

0.5V

V

+0.5V

ACE302A C/N20~26

1.5

4.0

-

mA

ACE302A C/N26~39

1.5

6.0

-

mA

ACE302A C/N39~60

1.5

8.0

-

mA

Leakage

Current

Only for NMOS open-drain output

products, V

-

1.0

μA

Temperature

Coefficient

Ta=

−40°C ~+85°C

-

±120

±360

ppm/°C

Delay time

Vin=Vdet+0.5V

130

210

290

ms

Block diagram

N channel open-drain

CMOS output

Electrical Characteristics

(Ta=25°C, unless otherwise specified)

DET(S)

DET(S)

DET(S)

*1.

−VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value