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BAS16HT1G 数据表(PDF) 1 Page - SUNMATE electronic Co., LTD |
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BAS16HT1G 数据表(HTML) 1 Page - SUNMATE electronic Co., LTD |
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1 / 2 page  200mA Surface Mount Switching Diode BAS16HT1G 1 of 2 Features Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Mechanical Data · Case Molded Plastic K L M J C H BA SOD-323 Dim Min Max A 0.25 0.35 B 1.20 1.40 C 2.30 2.70 H 1.60 1.80 J 0.00 0.10 K 1.0 1.1 L 0.20 0.40 M 0.10 0.15 α 0° 8° All Dimensions in mm Ratings at 25 o C ambient temperature unless otherwise specified. SYMBOLS Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current VR IF IFSM VALUE 75 200 500 UNITS Vdc mAdc mAdc Ratings at 25 o C ambient temperature unless otherwise specified. SYMBOLS Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current VR IF IFSM VALUE 75 200 500 UNITS Vdc mAdc mAdc Ratings at 25 o C ambient temperature unless otherwise specified. SYMBOLS Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current VR IF IFSM VALUE 75 200 500 UNITS Vdc mAdc mAdc Ratings at 25 o C ambient temperature unless otherwise specified. SYMBOLS Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current VR IF IFSM VALUE 75 200 500 UNITS Vdc mAdc mAdc Ratings at 25 o C ambient temperature unless otherwise specified. SYMBOLS Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current VR IF IFSM VALUE 75 200 500 UNITS Vdc mAdc mAdc SYMBOLS Reverse Voltage Leakage Current Reverse Breakdown Voltage Forward Voltage Junction Capacitance Forward Recovery Voltage Reverse Recovery Time Stored Charge ( VR=75Vdc ) ( VR=75Vdc, TJ=150 oC ) ( VR=25Vdc, TJ=150 oC ) ( IBR=100uAdc ) ( IF=1.0mAdc ) ( IF=10mAdc ) ( IF=50mAdc ) ( IF=150mAdc ) ( VR=0, f=1.0MHz ) ( IF=10mAdc, tr=20nS ) ( IF=IR=10mAdc, RL=50 ) ( IF=10mAdc, to VR=5.0Vdc, RL=500 ) IR V( BR ) VF CJ VFR trr QS UNITS MIN. MAX. - - - 1.0 50 30 uAdc Vdc 75 - - - - - 0.72 0.86 1.00 1.25 Vdc - 2.0 1.75 6.0 45 - - - pF Vdc nS pC CHARACTERISTIC Symbol Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 85 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second 600 mA TSTG Storage Temperature Range -65 to +150 °C TJ Operating Junction Temperature -55 to +150 °C Symbol Parameter Test Conditions Min. Max. Units VR Breakdown Voltage IR = 5.0µA85 V VF Forward Voltage IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA 715 855 1.0 1.25 mV mV V V IR Reverse Leakage VR = 75V VR = 25V, TA = 150°C VR = 75V, TA = 150°C 1.0 30 50 µA µA µA CT Total Capacitance VR = 0, f = 1.0MHz 2.0 pF trr Reverse Recovery Time IF = IR = 10mA, IRR = 1.0mA, RL = 100Ω 6.0 ns NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. * These ratings are limiting values above which the serviceability of the diode may be impaired. |
类似零件编号 - BAS16HT1G |
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类似说明 - BAS16HT1G |
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