2SC5752 datasheet(2/17 Pages) CEL

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Data Sheet P15658EJ1V0DS

NE67818 / 2SC5752

THERMAL RESISTANCE

Parameter

Symbol

Value

Unit

Junction to Ambient Resistance

Rth j-aNote

610

C/W

Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB

ELECTRICAL CHARACTERISTICS (TA = +25°°°°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0 mA

−

100

Emitter Cut-off Current

IEBO

VBE = 1 V, IC = 0 mA

−

100

DC Current Gain

hFENote1 VCE = 3 V, IC = 30 mA

120

150

−

RF Characteristics

Gain Bandwidth Product

VCE = 3 V, IC = 30 mA, f = 2 GHz

−

12.0

−

GHz

Insertion Power Gain

⏐

S21e⏐2 VCE = 3 V, IC = 30 mA, f = 2 GHz

8.0

10.0

−

VCE = 3 V, IC = 7 mA, f = 2 GHz,

ZS = Zopt

−

1.7

2.5

Reverse Transfer Capacitance

CreNote2 VCB = 3 V, IE = 0 mA, f = 1 MHz

−

0.46

0.7

Maximum Available Power Gain

MAGNote3 VCE = 3 V, IC = 30 mA, f = 2 GHz

−

13.0

−

VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz,

Pin = −5 dBm

−

12.5

−

Gain 1 dB Compression Output Power PO (1 dB) VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz,

Pin = 7 dBm

−

18.0

−

dBm

Collector Efficiency

ηC

VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz,

Pin = 7 dBm

−

Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

3. MAG =

hFE CLASSIFICATION

Rank

Marking

R55

hFE Value

75 to 150

(K – √√√√ (K2 – 1) )

S21

S12

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