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2SC5752 数据表(PDF) 5 Page - California Eastern Labs

部件名 2SC5752
功能描述  NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION
PDF  17 Pages
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制造商  CEL [California Eastern Labs]
网页  http://www.cel.com
标志 CEL - California Eastern Labs

2SC5752 数据表(HTML) 5 Page - California Eastern Labs

  2SC5752 Datasheet HTML 1Page - California Eastern Labs 2SC5752 Datasheet HTML 2Page - California Eastern Labs 2SC5752 Datasheet HTML 3Page - California Eastern Labs 2SC5752 Datasheet HTML 4Page - California Eastern Labs 2SC5752 Datasheet HTML 5Page - California Eastern Labs 2SC5752 Datasheet HTML 6Page - California Eastern Labs 2SC5752 Datasheet HTML 7Page - California Eastern Labs 2SC5752 Datasheet HTML 8Page - California Eastern Labs 2SC5752 Datasheet HTML 9Page - California Eastern Labs Next Button
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Data Sheet P15658EJ1V0DS
5
VCE = 3.2 V
f = 0.9 GHz
ICq = 10 mA (RF OFF)
25
20
15
10
5
0
250
50
100
200
150
0
5
0
1
–
0
5
1
0
1
5
–
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
GP
Pout
IC
C
η
VCE = 2.8 V
f = 1.8 GHz
ICq = 10 mA (RF OFF)
25
20
15
10
5
0
250
50
100
200
150
0
0
1
5
–
5
0
2
5
1
0
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
GP
Pout
IC
C
η
VCE = 3.2 V
f = 2.4 GHz
ICq = 10 mA (RF OFF)
25
20
15
10
5
0
250
50
100
200
150
0
0
1
5
–
5
0
2
5
1
0
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
GP
Pout
IC
C
η
VCE = 3.2 V
f = 1.8 GHz
ICq = 10 mA (RF OFF)
25
20
15
10
5
0
250
50
100
200
150
0
0
1
5
–
5
0
2
5
1
0
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
GP
Pout
IC
C
η
NE67818 / 2SC5752



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