BAS85 datasheet(1/2 Pages) SUNMATE

部件名	BAS85

功能描述	200mA Surface Mount Schottky Barrier Diode

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制造商	SUNMATE [SUNMATE electronic Co., LTD]

网页	http://www.sunmate.tw/

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1 / 2 page

200mA Surface Mount Schottky Barrier Diode

BAS85

SOD-80 Glass case

1 of 2

Features

·

Features

·

Mechanical Data

A

C

B

Dim

Min

Max

A

3.30

3.70

B

1.30

1.60

C

0.28

0.50

All Dimensions in mm

@ TA = 25

°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

SOD-80

·

Case:

·

· Component in accordance to RoHS 2002/95/EC

Lead (Pb)-free component

This diode is also available in a DO35 case with

The devices are prot

This diode features low turn-on voltage

For general purpose applications

ected by a PN junc-

tion guard ring against excessive voltage,

such as electrostatic discharges

type designation BAT85

and WEEE 2002/96/EC

Weight: approx. 31 mg

Cathode Band Color: black

Packaging Codes/Options:

GS18 / 10 k per 13" reel (8 mm tape), 10 k/box

GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box

1) Valid provided that electrodes are kept at ambient temperature.

Parameter

Test condition

Symbol

Value

Unit

Continuous reverse voltage

VR

30

V

Forward continuous current

Tamb = 25 °C

IF

2001)

mA

Peak forward current

Tamb = 25 °C

IFM

3001)

mA

Surge forward current

tp < 1 s, Tamb = 25 °C

IFSM

6001)

mA

Power dissipation

Tamb = 65 °C

Ptot

2001)

mW

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Reverse breakdown voltage

IR = 10 µA (pulsed)

V(BR)R

30

V

Leakage current

VR = 25 V

IR

0.2

2

µA

Forward voltage

Pulse test tp < 300 µs,

IF = 0.1 mA

VF

240

mV

Pulse test tp < 300 µs, IF = 1 mA

VF

320

mV

Pulse test tp < 300 µs,

IF = 10 mA

VF

400

mV

Pulse test tp < 300 µs,

IF = 30 mA

VF

500

mV

Pulse test tp < 300 µs,

IF = 100 mA

VF

800

mV

Diode capacitance

VR = 1 V, f = 1 MHz

Ctot

10

pF

Reverse recovery time

IF = 10 mA, IR = 10 mA,

Irr = 1 mA,

trr

5ns

类似零件编号 - BAS85

制造商	部件名	数据表	功能描述
NXP Semiconductors	BAS85	25Kb / 5P	Schottky barrier diode 1996 Oct 01
Vishay Siliconix	BAS85	51Kb / 4P	Schottky Barrier Diode 01-Apr-99
Diodes Incorporated	BAS85	47Kb / 1P	SILICON SCHOTTKY BARRIER DIODE DS30189 Rev. A-5
General Semiconductor	BAS85	42Kb / 2P	Schottky Diodes
Tak Cheong Electronics ...	BAS85	311Kb / 3P	200 mW LL-34 Hermetically Sealed Glass Fast Switching Schottky Barrier Diode

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