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IRFS3607 数据表(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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IRFS3607 数据表(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
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2 / 11 page  AUIRFS/SL3607 S D G Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.096 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 7.34 9.0 mΩ VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V gfs Forward Transconductance 115 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge ––– 56 84 Qgs Gate-to-Source Charge ––– 13 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 16 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 40 ––– RG(int) Internal Gate Resistance ––– 0.55 ––– Ω td(on) Turn-On Delay Time ––– 16 ––– tr Rise Time ––– 110 ––– td(off) Turn-Off Delay Time ––– 43 ––– tf Fall Time ––– 96 ––– Ciss Input Capacitance ––– 3070 ––– Coss Output Capacitance ––– 280 ––– Crss Reverse Transfer Capacitance ––– 130 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 380 ––– Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 610 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ãd VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 33 50 TJ = 25°C VR = 64V, ––– 39 59 TJ = 125°C IF = 46A Qrr Reverse Recovery Charge ––– 32 48 TJ = 25°C di/dt = 100A/μs f ––– 47 71 TJ = 125°C IRRM Reverse Recovery Current ––– 1.9 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ns nC pF ––– ––– ––– ––– 80 310 A μA nA nC ns ID = 46A RG = 6.8Ω VGS = 10V f VDD = 49V ID = 46A, VDS =0V, VGS = 10V TJ = 25°C, IS = 46A, VGS = 0V f integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 5mAd VGS = 10V, ID = 46A f VDS = VGS, ID = 100μA VDS = 75V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125°C MOSFET symbol showing the VDS = 38V Conditions VGS = 10V f VGS = 0V VDS = 50V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 60V h VGS = 0V, VDS = 0V to 60V g Conditions VDS = 50V, ID = 46A ID = 46A VGS = 20V VGS = -20V 2014-8-27 2 www.kersemi.com |
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