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IRFS4710 数据表(PDF) 1 Page - International Rectifier

部件名 IRFS4710
功能描述  Power MOSFET(Vdss=100v, Rds(on)max=0.014ohm, Id=75A)
PDF  11 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRFS4710 数据表(HTML) 1 Page - International Rectifier

  IRFS4710 Datasheet HTML 1Page - International Rectifier IRFS4710 Datasheet HTML 2Page - International Rectifier IRFS4710 Datasheet HTML 3Page - International Rectifier IRFS4710 Datasheet HTML 4Page - International Rectifier IRFS4710 Datasheet HTML 5Page - International Rectifier IRFS4710 Datasheet HTML 6Page - International Rectifier IRFS4710 Datasheet HTML 7Page - International Rectifier IRFS4710 Datasheet HTML 8Page - International Rectifier IRFS4710 Datasheet HTML 9Page - International Rectifier Next Button
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Notes
 through ‡ are on page 11
www.irf.com
1
3/16/01
IRFB4710
IRFS4710
IRFSL4710
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
100V
0.014
Ω
75A
PD- 94080
D2Pak
IRFS4710
TO-220AB
IRFB4710
TO-262
IRFSL4710
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
75
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
53
A
IDM
Pulsed Drain Current

300
PD @TA = 25°C
Power Dissipation
‡
3.8
W
PD @TC = 25°C
Power Dissipation
200
Linear Derating Factor
1.4
W/°C
VGS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak Diode Recovery dv/dt
ƒ
8.2
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torqe, 6-32 or M3 screw
†
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
l High frequency DC-DC converters
l Motor Control
l Uninterrutible Power Supplies
Benefits
Applications
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.74
RθCS
Case-to-Sink, Flat, Greased Surface
†
0.50
–––
°C/W
RθJA
Junction-to-Ambient
†
–––
62
RθJA
Junction-to-Ambient
‡
–––
40


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