IRG4BC20WS datasheet(2/9 Pages) IRF

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IRG4BC20W-S

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Parameter

Min. Typ. Max. Units

Conditions

Total Gate Charge (turn-on)

—

IC = 6.5A

Qge

Gate - Emitter Charge (turn-on)

—

3.7

5.5

VCC = 400V

See Fig.8

Qgc

Gate - Collector Charge (turn-on)

—

VGE = 15V

td(on)

Turn-On Delay Time

—

Rise Time

—

TJ = 25°C

td(off)

Turn-Off Delay Time

—

110

160

IC = 6.5A, VCC = 480V

Fall Time

—

VGE = 15V, RG = 50Ω

Eon

Turn-On Switching Loss

—

0.06

—

Energy losses include "tail"

Eoff

Turn-Off Switching Loss

—

0.08

—

See Fig. 9, 10, 14

Ets

Total Switching Loss

—

0.14

0.2

td(on)

Turn-On Delay Time

—

TJ = 150°C,

Rise Time

—

IC = 6.5A, VCC = 480V

td(off)

Turn-Off Delay Time

—

150

—

VGE = 15V, RG = 50Ω

Fall Time

—

150

—

Energy losses include "tail"

Ets

Total Switching Loss

—

0.34

—

See Fig. 10, 11, 14

Internal Emitter Inductance

—

7.5

—

Measured 5mm from package

Cies

Input Capacitance

—

490

—

VGE = 0V

Coes

Output Capacitance

—

VCC = 30V

See Fig. 7

Cres

Reverse Transfer Capacitance

—

8.8

—

ƒ = 1.0MHz

Parameter

Min. Typ. Max. Units

Conditions

V(BR)CES

Collector-to-Emitter Breakdown Voltage

600

—

VGE = 0V, IC = 250µA

V(BR)ECS

Emitter-to-Collector Breakdown Voltage

—

VGE = 0V, IC = 1.0A

∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage

—

0.48

—

V/°C

VGE = 0V, IC = 1.0mA

—

2.16

2.6

IC = 6.5A

VGE = 15V

VCE(ON)

Collector-to-Emitter Saturation Voltage

—

2.55

—

IC = 13A

See Fig.2, 5

—

2.05

—

IC = 6.5A , TJ = 150°C

VGE(th)

Gate Threshold Voltage

3.0

—

6.0

VCE = VGE, IC = 250µA

∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage

—

-8.8

—

mV/°C VCE = VGE, IC = 250µA

gfe

Forward Transconductance

5.5

8.3

—

VCE = 100 V, IC = 6.5A

—

250

VGE = 0V, VCE = 600V

—

2.0

VGE = 0V, VCE = 10V, TJ = 25°C

—

1000

VGE = 0V, VCE = 600V, TJ = 150°C

IGES

Gate-to-Emitter Leakage Current

—

±100

VGE = ±20V

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

ICES

Zero Gate Voltage Collector Current

µA

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

Pulse width 5.0µs, single shot.

Notes:

Repetitive rating; V

GE = 20V, pulse width limited by

max. junction temperature. (See Fig. 13b)

CC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω,

(See Fig. 13a)

Repetitive rating; pulse width limited by maximum

junction temperature.

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