IRG4BC20WS datasheet(1/9 Pages) IRF

部件名	IRG4BC20WS

功能描述	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)

PDF	9 Pages

Scroll/Zoom	100%

制造商	IRF [International Rectifier]

网页	http://www.irf.com

标志

1 / 9 page

Parameter

Max.

Units

VCES

Collector-to-Emitter Breakdown Voltage

600

V

IC @ TC = 25°C

Continuous Collector Current

13

IC @ TC = 100°C

Continuous Collector Current

6.5

A

ICM

Pulsed Collector Current

52

ILM

Clamped Inductive Load Current

52

VGE

Gate-to-Emitter Voltage

± 20

V

EARV

Reverse Voltage Avalanche Energy

200

mJ

PD @ TC = 25°C

Maximum Power Dissipation

60

PD @ TC = 100°C

Maximum Power Dissipation

24

TJ

Operating Junction and

-55 to + 150

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (0.063 in. (1.6mm) from case )

°C

IRG4BC20W-S

INSULATED GATE BIPOLAR TRANSISTOR

PD - 94076

E

C

G

Features

• Designed expressly for Switch-Mode Power

Supply and PFC (power factor correction)

applications

• Industry-benchmark switching losses improve

efficiency of all power supply topologies

• 50% reduction of Eoff parameter

• Low IGBT conduction losses

• Latest-generation IGBT design and construction offers

tighter parameters distribution, exceptional reliability

• Lower switching losses allow more cost-effective

operation than power MOSFETs up to 150kHz

("hard switched" mode)

• Of particular benefit to single-ended converters and

boost PFC topologies 150W and higher

• Low conduction losses and minimal minority-carrier

recombination make these an excellent option for

resonant mode switching as well (up to >>300kHz)

Benefits

VCES = 600V

VCE(on) typ. = 2.16V

@VGE = 15V, IC = 6.5A

Absolute Maximum Ratings

W

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

2.1

RθCS

Case-to-Sink, Flat, Greased Surface

0.5

–––

°C/W

RθJA

Junction-to-Ambient, typical socket mount

–––

40

Wt

Weight

1.44

–––

g (oz)

Thermal Resistance

5/24/00

N-channel

www.irf.com

1

D2Pak

类似零件编号 - IRG4BC20WS

制造商	部件名	数据表	功能描述
International Rectifier	IRG4BC20W	130Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
	IRG4BC20W-SPBF	212Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR
	IRG4BC20W-SPBF	268Kb / 9P	INSULATED GATE BIPOLAR TRANSISTOR
	IRG4BC20W-SPBF	268Kb / 9P	INSULATED GATE BIPOLAR TRANSISTOR
	IRG4BC20WPBF	209Kb / 9P	INSULATED GATE BIPOLAR TRANSISTOR

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类似说明 - IRG4BC20WS

制造商	部件名	数据表	功能描述
International Rectifier	IRG4BC20U	167Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
	IRG4BC20W	130Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
	IRG4BC30K	137Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
	IRG4BC30U	167Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
	IRG4BC40U	169Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
	IRG4PC30F	145Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
	IRG4PC40U	148Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)
	IRG4PC50F	146Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
	IRGBC20U	253Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.5A)
	IRGPC20U	258Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.5A)

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IRG4BC20WS 数据表(PDF) 1 Page - International Rectifier

IRG4BC20WS 数据表(HTML) 1 Page - International Rectifier

类似零件编号 - IRG4BC20WS

类似说明 - IRG4BC20WS

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IRG4BC20WS 数据表(PDF) 1 Page - International Rectifier

IRG4BC20WS 数据表(HTML) 1 Page - International Rectifier

类似零件编号 - IRG4BC20WS

类似说明 - IRG4BC20WS

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