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AN2061 数据表(PDF) 4 Page - STMicroelectronics |
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AN2061 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 15 page ![]() AN2061 4/15 2 EMBEDDED-FLASH AND EEPROM Before describing the proposed concept for EEPROM emulation, it is important to remember the main differences between the embedded-Flash memory of a microcontroller and serial ex- ternal EEPROMs. Those differences are generic to any microcontroller (i.e.: not specific to ST10F2xx variants). They are summarized in the table below. 2.1 Difference in write access time As Flash has shorter write access time, critical parameters can be stored faster in the emulat- ed EEPROM than in a serial external EEPROM, thereby improving the robustness of the sys- tem if the same safety concept is kept. 2.2 Difference in writing method One of the important differences between external EEPROM and emulated EEPROM for em- bedded applications is the writing method. – Stand-alone external EEPROM: once started by the CPU, the writing of a word cannot be interrupted by a CPU reset. Only supply failure will interrupt the writing process; so properly sizing the decoupling capacitors can secure the complete writing process in- side a stand-alone EEPROM. – Emulated EEPROM from an embedded-Flash: once started by the CPU, the writing can be interrupted by a power failure and by a CPU reset. This difference should be analysed by system designers to understand the possible impact(s) in their applications and to define the proper handling method. 2.3 Difference in erase time The difference in erase time is the other important difference between stand-alone EEPROMs and emulated EEPROM with embedded-Flash. Unlike Flash, EEPROM does not require a block erase operation to free-up space before write. This means that some form of software management is required to store data in Flash. Moreover, as the erase process of a block in the Flash takes few seconds, power shut-down and other spurious events that may interrupt Table 1. Differences between Embedded Flash and EEPROM Feature EEPROM Emulated EEPROM from embedded- Flash Write time some ms random byte : 5 to 10ms page: equivalent to hundred us / word (5 to 10ms per page) some us (ex : 16us per word) Erase time N/A seconds (ex : 1.5s) Write method once started, is not CPU dependent; needs only proper supply. once started, is CPU dependent: a CPU reset will stop the write process even if supply stays inside specification. Write access serial : hundred us random word : 92us page : 22.5us /byte parallel : hundred ns very few CPU cycles per word. |
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