AN3316 datasheet(7/42 Pages) STMICROELECTRONICS

7 / 42 page

AN3316

Power consumption factors

Doc ID 18232 Rev 2

7/42

1.3

Static power reduction

The two main system/market constraints that influenced SPC560B definition:

●

Request for more performance/integration and cost reductions leading to the usage of

more and more advanced and small technologies

●

Carmakers’ constraints to maintain functions even when the car is switched off with a

max consumption of 100µA to 1mA for the overall ECU and depending on its type,

BCM, door module etc.

In order to match these two constraints, ST developed the SPC560B with following features:

●

Adopting 90nm technology to meet integration/costs but with using a low leakage

technology (Leakage minimization)

●

Subdividing device into following different PD0, PD1, PD2, PD3 power domains to meet

LP function/consumption (Power Segmentation)

These domains are individually disconnected from Power and so eliminates the leakage

from the areas they are turned off.

Figure 3.

SPC560B54/6x power domain structure

Vreg

power

gating

64K

RAM

24K

RAM

Peripheral

Set One

Platform

XOSC

ZO core

JTAG

Peripheral

Set Two

PLL

API/

RTC

Wake-up

Logic

Reset &

Wake-up

vector

128KHz

IRC

16 Mhz

IRC

PCU

RGM

RAM

32KHz

XTAL

CAN

Sampler

Part of

Magic Carpet

PD3

RAM Domain 2

PD2

RAM Domain 1

CGM

CGL

PD0

Always 0

domain

PD1

Micro

domain

Notes:

LV = Low Voltage(1.2V on SPC560B)

HV = High Voltage(3.3V on SPC560B)

PD = Power Domain

RD = RAM Power Domain

PCU = Power Control Unit

RGM = Reset Generation Module

CGM = Clock Generation Module

CGL = Clock Gating Logic

ME = mode Entry unit

AN3316 数据表(PDF) 7 Page - STMicroelectronics

AN3316 数据表(HTML) 7 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42

数据表下载