SSG4953_15 datasheet(1/4 Pages) SECOS

部件名	SSG4953

功能描述	Dual-P Enhancement Mode Power MOSFET

PDF	4 Pages

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制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

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1 / 4 page

Elektronische Bauelemente

SSG4953

-6 A, -30 V, RDS(ON) 45 m

Dual-P Enhancement Mode Power MOSFET

21-Jul-2014 Rev. F

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

A

H

B

M

D

C

J

K

F

L

E

N

G

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SSG4953 uses advanced trench technology to

provide excellent on-resistance, low gate charge and

operation with gate voltages as low as 2.5V. The device is

suitable for use as a load switch or in PWM applications.

It may be used in a common drain arrangement to from a

bidirectional blocking switch.

FEATURES



Simple Drive Requirement



Lower On-resistance



Low Gate Charge

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOP-8

3K

13’ inch

MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

±20

V

TA = 25°C

-6

Continuous Drain Current @ VGS=10V

1

TA = 100°C

ID

-4

A

Pulsed Drain Current

2

IDM

-12

A

Single Pulse Avalanche Energy

3

EAS

108

mJ

Avalanche Current

IAS

19

A

Total Power Dissipation

4

TA = 25°C

PD

1.5

W

Operating Junction & Storage Temperature Range

TJ, TSTG

-55 ~ 150

°C

Thermal Resistance Ratings

Thermal Resistance Junction-Ambient

1 (Max.)

RθJA

83

°C / W

Thermal Resistance Junction-Case

1 (Max.)

RθJC

60

°C / W

SOP-8

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

5.80

6.20

H

0.35

0.49

B

4.80

5.00

J

0.375 REF.

C

3.80

4.00

K

45°

D0°

8°

L

1.35

1.75

E

0.40

0.90

M

0.10

0.25

F

0.19

0.25

N

0.25 REF.

G

1.27 TYP.

4953SS







= Date Code

S1

G1

G2

S2

D1

D2

类似零件编号 - SSG4953_15

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VBsemi Electronics Co.,...	SSG4953P	1Mb / 9P	Dual P-Channel 30-V (D-S) MOSFET

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