SSG4953_15 datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSG4953

-6 A, -30 V, RDS(ON) 45 m

Dual-P Enhancement Mode Power MOSFET

21-Jul-2014 Rev. F

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test condition

Static

Drain-Source Breakdown Voltage

BVDSS

-30

VGS=0V, ID= -250μA

Gate-Threshold Voltage

VGS(th)

-1

-2.5

VDS=VGS, ID = -250μA

Forward Transfer Conductance

Gfs

VDS= -10V, ID= -6A

Gate-Body Leakage

IGSS

±100

VGS=±20V

Drain-Source Leakage Current

IDSS

-1

μA

VDS= -24V,VGS=0

VGS= -10V, ID = -5A

Drain-Source On-Resistance

RDS(ON)

mΩ

VGS= -4.5V, ID = -4A

Total Gate Charge

6.4

Gate-Source Charge

Qgs

2.7

Gate-Drain (“Miller”) Charge

Qgd

3.1

ID= -6A

VDS= -20V

VGS= -4.5V

Turn-On Delay Time

Td(on)

Rise Time

16.6

Turn-Off Delay Time

Td(off)

Fall Time

21.6

VDS= -12V

ID= -5A

VGS= -10V

RG= 3.3Ω

Input Capacitance

Ciss

645

Output Capacitance

Coss

272

Reverse Transfer Capacitance

Crss

105

VGS=0V

VDS= -25V

f=1.0MHz

Avalanche Characteristics

Single Pulse Avalanche Energy

EAS

VDD= -25V, L=0.1mH, IAS= -10A

Source-Drain Diode

Forward On Voltage

VDS

-0.84

-1.2

IS= -1.7A, VGS=0V

Continuous Source Current

1.6

-6

Pulsed Source Current

2.6

ISM

-12

VG= VD=0V

Force Current

Notes:

1. surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 135℃/W when mounted on Min. copper pad.

2. The data tested by pulsed , pulse width≦300us , duty cycle≦2%

3. The EAS data shows Max. rating . The test condition is VDD= -25V,VGS= -10V,L=0.1mH,IAS= -19A

4. The power dissipation is limited by 150℃ junction temperature

5. The Min. value is 100% EAS tested guarantee.

6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

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