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AN3152 数据表(PDF) 9 Page - STMicroelectronics |
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AN3152 数据表(HTML) 9 Page - STMicroelectronics |
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9 / 17 page ![]() AN3152 Measurements on the BOOST stage Doc ID 17056 Rev 1 9/17 3 Measurements on the BOOST stage Although MDmesh™ power MOSFETs and SiC diodes are used on every stage of the inverter, the following results derive from the inverter front-end stage called the BOOST stage. This stage is used as a case study to validate the performance of the fastest power MOSFETs and diodes available on the market. The basic BOOST configuration is very similar to other applications like a traditional single switch PFC, as shown in Figure 2, but in this case, the input voltage is continuous rather than pulsed. Efficiency is measured in the worst conditions, which means at the lowest input voltage, so that at full load the input current is the highest possible. Note that higher-speed commutation leads to higher efficiency, but at the same time spike voltage and current stimulus on the main switch are higher also. Therefore finding a good trade-off is recommended. In any case, a 650 V breakdown voltage keeps the MDmesh™ V within a safe working zone. An STW42N65M5 and an STPSC1006 are used for this stage. Figure 6 shows the efficiency versus output power, at VDCIN = 200 V and gate resistance Rg= 8.2 Ω. With 8.2 Ω, we achieved a di/dt of 1400 A/µs during turn-on, which provides good noise immunity and low EMI irradiation. Figure 6. Efficiency vs. power output on BOOST stage @ Rg=8.2 Ω and di/dt = 1400 W Figure 7 shows the BOOST signals during normal operation at V IN = 200 V, VOUT = 450 V, and POUT = 1300 W. Figure 8 shows the detailed BOOST signals during turn-on at VIN = 200 V, VOUT = 450 V, and POUT = 1700 W. Please note the peak current on the trace in black |
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