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AN3152 数据表(PDF) 9 Page - STMicroelectronics

部件名 AN3152
功能描述  The right technology for solar converters
PDF  17 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

AN3152 数据表(HTML) 9 Page - STMicroelectronics

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AN3152
Measurements on the BOOST stage
Doc ID 17056 Rev 1
9/17
3
Measurements on the BOOST stage
Although MDmesh™ power MOSFETs and SiC diodes are used on every stage of the
inverter, the following results derive from the inverter front-end stage called the BOOST
stage. This stage is used as a case study to validate the performance of the fastest power
MOSFETs and diodes available on the market. The basic BOOST configuration is very
similar to other applications like a traditional single switch PFC, as shown in
Figure 2, but in
this case, the input voltage is continuous rather than pulsed. Efficiency is measured in the
worst conditions, which means at the lowest input voltage, so that at full load the input
current is the highest possible. Note that higher-speed commutation leads to higher
efficiency, but at the same time spike voltage and current stimulus on the main switch are
higher also. Therefore finding a good trade-off is recommended. In any case, a 650 V
breakdown voltage keeps the MDmesh™ V within a safe working zone. An STW42N65M5
and an STPSC1006 are used for this stage.
Figure 6 shows the efficiency versus output
power, at VDCIN = 200 V and gate resistance Rg= 8.2 Ω.
With 8.2
Ω, we achieved a di/dt of 1400 A/µs during turn-on, which provides good noise
immunity and low EMI irradiation.
Figure 6.
Efficiency vs. power output on BOOST stage @ Rg=8.2 Ω and
di/dt = 1400 W
Figure 7 shows the BOOST signals during normal operation at V
IN = 200 V, VOUT = 450 V,
and POUT = 1300 W. Figure 8 shows the detailed BOOST signals during turn-on at VIN =
200 V, VOUT = 450 V, and POUT = 1700 W. Please note the peak current on the trace in black



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