AN4021

Diode reverse characteristics

Doc ID 022588 Rev 1

3/10

1

Diode reverse characteristics

1.1

Junction temperature and reverse voltage dependence

The leakage current is an intrinsic parameter of the diode. In each ST Schottky and SiC

diode datasheet, a curve of the leakage current (typical value) versus the reverse voltage

and the junction temperature is provided (Figure 2).

Most of the time, the reverse losses are calculated using maximum values in order to

consider the worst operating conditions for the diode in the application. The ratio between

typical and maximum values can be obtained using the values given in the section “Static

electrical characteristic” of the datasheet. (Figure 3)

Figure 2.

Reverse leakage current versus reverse voltage applied for the

STPS20M100S (typical values)

Figure 3.

Typical and maximum leakage current at the voltage rating of the diode

IR(mA)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

0

1020

3040506070

8090

100

Tj=150°C

Tj=125°C

Tj=25°C

Tj=100°C

Tj=75°C

Tj=50°C

VR(V)

I

R

Reverse leakage current

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

T = 25 °C

j

V = 70 V

R

V = 100 V

R

5

5

10

10

40

40

µA

µA

mA

mA

T = 125 °C

j

T = 25 °C

j

T = 125 °C

j