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AN4021 数据表(PDF) 4 Page - STMicroelectronics |
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AN4021 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 10 page ![]() Diode reverse characteristics AN4021 4/10 Doc ID 022588 Rev 1 1.2 Diode reverse characteristics modeling: IR(VR,Tj), “c” thermal coefficient The parameter (IR) increases by an exponential law with the junction temperature. Knowing a reference point IR(VR,TjRef) and the value of the thermal coefficient “c”, one can easily calculate the leakage current at a given temperature Tj using the following formula: Equation 1 Where VR is the reverse “plateau” voltage applied across the diode. The “c” thermal coefficient represents the leakage current dependence with the junction temperature. Each diode has its own coefficient that can be calculated using two points as follows: Equation 2 In each ST Datasheet, TjRef1 & TjRef2 are respectively 25°C and 125°C. The “c” coefficient is independent of the reverse voltage VR applied across the diode. ) ( Re Re ) , ( ) , ( f j j T T c f j R R j R R e T V I T V I - · = ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ · - = ) , ( ) , ( ln 1 1 Re 2 Re 1 Re 2 Re f j R R f j R R f j f j T V I T V I T T c |
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