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AN557 数据表(PDF) 1 Page - STMicroelectronics |
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AN557 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 52 page ![]() 1/52 AN557 APPLICATION NOTE November 2003 THE TECHNOLOGY The technology architecture is based on the vertical DMOS silicon gate process that allows a channel length of 1.5 micron ; using a junction isolation technique it has been possible to mix on the same chip Bipolar and CMOS transistors along with the DMOS power components (Fig. 2). Figure 1 shows how this process brings a rapid increase in power IC complexity compared to conventional bipolar technology. In the 70’s class B circuits and DC circuits allowed output power in the range of 70W. By 1980, with the in- troduction of switching techniques in power ICs, output powers up to 200W were reached ; with BCD tech- nology the output power increased up to 400W. EASY APPLICATION DESIGN WITH THE L4970A, MONOLITHIC DC-DC CONVERTERS FAMILY The L497XA series of high current switching regulator ICs exploit Multipower-BCD technology to achieve very high output currents with low power dissipation – up to 10A in the Multiwatt power package and 3.5A in a DIP package . |
类似零件编号 - AN557 |
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类似说明 - AN557 |
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