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AN2123 数据表(PDF) 7 Page - STMicroelectronics |
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AN2123 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 15 page ![]() AN2123 Active Miller clamp 7/15 For very high-power applications, the active clamp function cannot replace the negative gate drive, due to the effect of the parasitic inductance of the active clamp path. In these cases, the application can benefit from the CLAMP output as an secondary gate discharge path (see Figure 11 below). With the above schematic, when the gate voltage goes close to VL+2 V (i.e. the IGBT is already driven off), the CLAMP pin is activated. Again, the benefit is to lower the resistance between gate and emitter when the IGBT is in the OFF state without affecting the IGBT turn-off characteristics. Tip: What should one do with the CLAMP pin when not used in application? Connect CLAMP to VL. Figure 11. High power application: negative gate drive and secondary gate discharge path VH 1 2 3 4 5 6 7 8 TD351 CD IN VREF LVOFF OUT VL CLAMP VH T1 T2 T3 16V -10V |
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