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AN2123 数据表(PDF) 4 Page - STMicroelectronics

部件名 AN2123
功能描述  Principles of operation and application
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

AN2123 数据表(HTML) 4 Page - STMicroelectronics

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Output stage
AN2123
4/15
4 Output stage
The output stage is able to sink/source about 1.7 A / 1.3 A typical at 25°C with a voltage drop VOL/VOH
of 6 V (see Figure 6). The minimum sink/source currents over the full temperature range (-20°C/+125°C)
are 1 A sink and 0.75 A source. VOL and VOH voltage drops at 0.5 A are guaranteed to 2.5 V and 4 V
maximum respectively, over the temperature range (see Figure 7). This current capability sets the limit of
IGBT driving, and the IGBT gate resistor should not be lower than about 15
Ω.
Figure 6. Typical Output stage current capability at 25°C (VH=16V)
Figure 7. Typical VOL and VOH voltage variation with temperature
OUT source current versus voltage (turn-on)
0.0
0.5
1.0
1.5
2.0
2.5
0
5
10
15
Vout (V)
OUT sink current versus voltage (turn-off)
0.0
0.5
1.0
1.5
2.0
2.5
05
10
15
Vout (V)
Low level output voltage vs. Temperature
0.0
1.0
2.0
3.0
-50
-25
0
25
50
75
100
125
Temp (°C)
Iosink=500mA
Iosink=20mA
High level output voltage vs. Temperature
0.0
1.0
2.0
3.0
4.0
-50
-25
0
25
50
75
100
125
Temp (°C)
Iosource=500mA
Iosource=20mA



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