| 数据搜索系统,热门电子元器件搜索 |
|
AN4355 数据表(PDF) 23 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
AN4355 数据表(HTML) 23 Page - STMicroelectronics |
|
23 / 25 page ![]() DocID025240 Rev 2 23/25 AN4355 Layout suggestions 25 8 Layout suggestions The L648x devices require external MOSFETs for implementing the power stage which drives the motor phases. The electrical connections between the device and the external MOSFETs are critical and particular attention must be paid to reduce parasitic inductances. Figure 16 shows the critical paths which should be designed to be as short as possible and the area of the circuits should be minimized avoiding the sensitivity of such structures to the surrounding noise. Typically, a good power system layout keeps the power MOSFETs as close as possible to the related gate driver. Figure 16. Layout critical paths |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |