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AN2385 数据表(PDF) 9 Page - STMicroelectronics

部件名 AN2385
功能描述  Power dissipation and its linear derating factor
PDF  14 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

AN2385 数据表(HTML) 9 Page - STMicroelectronics

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AN2385
Determination of the power dissipation and its derating factor
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Determination of the power dissipation and its
derating factor
The Power Dissipation value is the maximum power that the device can dissipate in
continuous operating mode when the device works in "on state" and the thermal impedance
is only due to RTHJC. The power dissipation depends on the case temperature. Typically, in
Power MOSFET datasheets, it is reported at ambient temperature (25°C). In order to
calculate the power dissipation value the consider RDSON value must be considered at the
maximum junction temperature. It is possible to demonstrate that such value is around two
times the values of RDSON at ambient temperature considering the data measured. Power
Dissipation can be written as:
Equation 5
Furthermore, PD can be established for any other fixed operation case temperature
considering that the guaranteed maximum junction temperature is 150°C or 175°C (see
Figure 5.).
Figure 5.
Power dissipation vs T
The Linear Derating Factor of Power Dissipation factor is defined as the angular coefficient
of the line shown in Figure 5. It can be calculated as:
Equation 6
P
D
T25
° C
=
()
R
DSON T
JMAX I
DSL
()
()
I
DSL
2
T
JMAX
25
° C
R
THJC
---------------------------------
=
=
∂P
D
∂T
----------
P
D
T25
° C
=
()
T
JMAX
25
° C
---------------------------------
1
R
THLJC
--------------------
=
=



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