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AN2385 数据表(PDF) 3 Page - STMicroelectronics |
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AN2385 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 14 page ![]() AN2385 List of figures 3/14 List of figures Figure 1. Typical FBSOA of a Power MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 2. RDSON limit for MOSFET's FBSOA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 3. Typical RBSOA of a Power MOSFET. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 4. Silicon limited drain current vs case temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Figure 5. Power dissipation vs T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Figure 6. IDM determination considering the output characteristic . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Figure 7. Junction to case maximum effective transient thermal impedance for TO-220 package.. . 10 Figure 8. Determination of the maximum rectangular pulse duration . . . . . . . . . . . . . . . . . . . . . . . . 11 |
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