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AN4544 数据表(PDF) 7 Page - STMicroelectronics |
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AN4544 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 35 page ![]() DocID026535 Rev 1 7/35 AN4544 General IGBT overview 35 Figure 2. Equivalent (a) and simplified equivalent circuits (b) 1.1 IGBT technology evolution The trench field-stop technology includes several benefits if compared to the planar PT (punch through). Implanted back-emitter and field-stop for a better control of the dynamic behavior together with the introduction of the trench structure offer an improved performance like lower conduction and switching loss, much higher robustness and a significant RTH reduction due to very thin die. Figure 3. IGBT technology evolution |
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