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AN4544 数据表(PDF) 31 Page - STMicroelectronics

部件名 AN4544
功能描述  IGBT datasheet tutorial
PDF  35 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

AN4544 数据表(HTML) 31 Page - STMicroelectronics

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AN4544
Datasheet explanation
35
2.7.8
Diode switching characteristics (inductive load)
A typical reverse recovery waveform is shown in Figure 30. The reverse recovery time trr is
defined as the time from diode current zero-crossing to where the current returns within 25%
of the peak recovery current IRM(rec). A better way to characterize the rectifier reverse
recovery is to divide the reverse recovery time into two different regions, ta and tb, where ta
time is a function of the forward current and the applied di/dt. A charge Qa can be assigned
to this region, the area under the curve. tb portion of the reverse recovery current is not well-
fixed, in fact measured tb times vary according to the switch characteristic, circuit parasitic,
load inductance and the applied reverse voltage. A relative softness can be defined as the
ratio of tb to ta. General purpose rectifiers are very soft (softness factor about 1.0), fast
recovery diodes are fairly soft (softness factor about 0.5) and ultrafast rectifiers are not soft
(softness factor about 0.2).
Table 12. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 40 A, VR = 400 V,
VGE = 15 V, di/dt=1000 A/µs
-41
-
ns
Qrr
Reverse recovery charge
-
440
-
nC
Irrm
Reverse recovery current
-
21.6
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-1363
-
A/µs
Err
Reverse recovery energy
-
151
-
µJ
trr
Reverse recovery time
IF = 40 A, VR = 400 V,
VGE = 15 V, di/dt=1000 A/µs
TJ = 175 °C
-
109
-
ns
Qrr
Reverse recovery charge
-
2400
-
nC
Irrm
Reverse recovery current
-
44.4
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-
670
-
A/µs
Err
Reverse recovery energy
-
718
-
µJ



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