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AN4544 数据表(PDF) 31 Page - STMicroelectronics |
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AN4544 数据表(HTML) 31 Page - STMicroelectronics |
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31 / 35 page ![]() DocID026535 Rev 1 31/35 AN4544 Datasheet explanation 35 2.7.8 Diode switching characteristics (inductive load) A typical reverse recovery waveform is shown in Figure 30. The reverse recovery time trr is defined as the time from diode current zero-crossing to where the current returns within 25% of the peak recovery current IRM(rec). A better way to characterize the rectifier reverse recovery is to divide the reverse recovery time into two different regions, ta and tb, where ta time is a function of the forward current and the applied di/dt. A charge Qa can be assigned to this region, the area under the curve. tb portion of the reverse recovery current is not well- fixed, in fact measured tb times vary according to the switch characteristic, circuit parasitic, load inductance and the applied reverse voltage. A relative softness can be defined as the ratio of tb to ta. General purpose rectifiers are very soft (softness factor about 1.0), fast recovery diodes are fairly soft (softness factor about 0.5) and ultrafast rectifiers are not soft (softness factor about 0.2). Table 12. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 40 A, VR = 400 V, VGE = 15 V, di/dt=1000 A/µs -41 - ns Qrr Reverse recovery charge - 440 - nC Irrm Reverse recovery current - 21.6 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb -1363 - A/µs Err Reverse recovery energy - 151 - µJ trr Reverse recovery time IF = 40 A, VR = 400 V, VGE = 15 V, di/dt=1000 A/µs TJ = 175 °C - 109 - ns Qrr Reverse recovery charge - 2400 - nC Irrm Reverse recovery current - 44.4 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb - 670 - A/µs Err Reverse recovery energy - 718 - µJ |
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