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AN2645 数据表(PDF) 31 Page - STMicroelectronics

部件名 AN2645
功能描述  Migration and compatibility guidelines for STM8S microcontroller applications
PDF  36 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

AN2645 数据表(HTML) 31 Page - STMicroelectronics

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AN2645
Block-by-block compatibility analysis
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3.7.2
EEPROM data memory
The data EEPROM memory organization differs slightly in each sub-family. There are three
different data EPROM densities:
●
High density in the STM8S208x and STM8S207x sub-families
●
Medium density in the STM8S105x subfamily
●
Low density in the STM8S103x and STM8S903x sub-families
The data EEPROM is organized in pages:
●
High density and medium density data EEPROM are organized in up to 4 pages of 512
bytes each. Each page is divided into 4 blocks of 128 bytes each. A block is the
maximum amount of memory that can be programmed in a single programming cycle.
●
Low density data EEPROM is organized in up to 10 pages of 64 bytes. A page consists
of a single block of 64 bytes.
The start address of data EEPROM is always 0x4000. Refer to the STM8S datasheets for
more details.
Table 25.
Flash program memory size in bytes for each package/sub-family
Sub-family
Memory
density
LQFP80
(xxxM)
LQFP64
(xxxR)
LQFP48
(xxxC)
LQFP44
(xxxS)
LQFP32
(xxxK)
LQFP20
(xxxF)
STM8S208x
High
128K
128K
STM8S207x
High
128K
128K
64K
32K
128K
64K
64K
32K
STM8S105x
Medium
32K
16K
32K
16K
32K
16K
STM8S103x
Low
8K
8K
4K
STM8S903x
Low
8K
Table 26.
Flash program memory granularity in each sub-family
Sub-family
Number of pages
Page size [bytes]
Blocks per page
Block size [bytes]
STM8S20xx
up to 256
512
4
128
STM8S105x
up to 64
512
4
128
STM8S103x
up to 128
64164
STM8S903x
up to 128
64164



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