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AN2657 数据表(PDF) 9 Page - STMicroelectronics |
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AN2657 数据表(HTML) 9 Page - STMicroelectronics |
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9 / 18 page ![]() AN2657 Model description and parameter extraction 9/18 Equation 22 Equation 23 The remaining model parameters are the capacitances Cgs and Cgd of the MOSFET. The gate-source capacitance is modeled with a constant capacitance, because it is related to a highly doped MOSFET (Equation 24). Equation 24 Moreover, the gate-drain capacitance can be considered as a classic MOSFET model capacitance, where the equations of the charged capacitance (Equation 25, 26, 27, 28) can be divided into four regions (Figure 3). Even in this case, capacitance variation depends on temperature (Equation 29). Equation 25 Equation 26 Equation 27 Equation 28 Ibv I BV I s BV V T -------- ⋅ ⎩ ⎪ ⎨ ⎪ ⎧ = I BV 0A > I BV 0A ≤ f1 CjT VjT ⋅ 1MJ – --------------------------- = Qd TT Id f1 1 1Vd – VjT ----------------- ⎝⎠ ⎛⎞ 1MJ – () + ⎝⎠ ⎛⎞ CjlparT Vd ⋅ + ⋅ + ⋅ = f1 CjT 1FCP – () 1MJ – () -------------------------------------------- = f2 1 FCP 1 MJ + () ⋅ – = Qd TT Id f1 f2 Vd 0.5 MJ Vd 2 ⋅ VjT -------------------------- ⋅ + ⋅ ⎝⎠ ⎛⎞ CjlparT Vd ⋅ + ⋅ + ⋅ = ⎩⎭ ⎪⎪ ⎪⎪ ⎪⎪ ⎪⎪ ⎪⎪ ⎪⎪ ⎨⎬ ⎪⎪ ⎪⎪ ⎪⎪ ⎪⎪ ⎪⎪ ⎪⎪ ⎧⎫ - - V D FCP ≤ V D FCP > Qgs CgsT Vgs ⋅ = Cgd Cgx0 1 Vgx VFB – Vjx ----------------------------- – ⎝⎠ ⎛⎞ Mjx ---------------------------------------------------- CgdovlT + = Qgd Cgx0 Vjx ⋅ 1Mjx – ------------------------------- 1 VFB Vjx ------------ + ⎝⎠ ⎛⎞ 1Mjx – 1 VFB Vgx – Vjx ----------------------------- + ⎝⎠ ⎛⎞ 1Mjx – – ⎝⎠ ⎛⎞ CgdovlT Vgd ⋅ + ⋅ = Qgd Cgx0 Vgd VFB – () Cgx0 Vjx ⋅ 1Mjx – ------------------------------- 1 VFB Vjx ------------ + ⎝⎠ ⎛⎞ 1Mjx – 1 – ⎝⎠ ⎛⎞ CgdovlT Vgd ⋅ + ⋅ + ⋅ = Cgd Cgx0 1 Vgx VFB – Vjx ----------------------------- – ⎝⎠ ⎛⎞ Mjx ---------------------------------------------------- CgdovlT + = Qgd Cgx0 VFB Cgx0 Vjx ⋅ 1Mjx – ------------------------------- 1 VFB Vgx – Vjx ----------------------------- + ⎝⎠ ⎛⎞ 1Mjx – 1 – ⎝⎠ ⎛⎞ CgdovlT Vgd ⋅ + ⋅ + ⋅ = Cgd Cgx0 CgdovlT + = Qgd Cgx0 CgdovlT + () Vgd ⋅ = |
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