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AN2657 数据表(PDF) 5 Page - STMicroelectronics |
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AN2657 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 18 page ![]() AN2657 Model description and parameter extraction 5/18 Nonlinear current generator The nonlinear current generator controlled by Vgs and Vds is the most important factor used to calculate the static and dynamic current of the device. Moreover, the static current is required to define the working region of the MOS. Table 1 reports all the parameters required to extract the equations of the current generator. To get the generator current equation, a set of equations must be defined. An important parameter to consider is the threshold voltage of the device shown in Equation 2. Equation 2 Moreover, a new threshold voltage formula is necessary to describe the weak and strong inversion region in a single equation (Equation 3). Equation 3 To describe both regions, a new gate voltage can be defined as in Equation 4. Equation 4 Table 1. Parameters required for the extraction of the current generator equations Name Description VT0 Threshold voltage [V] ETA Drain induce barrier lowering (DIBL) [V-1] KP0 Transconduttance [A*V-2] THETA Mobility degradation [V-VGTHETA] VGTHETA Mobility degradation exponent [-] THETA2..9 From 2nd to 9th degradation polynomial factor [V-2] XN Slope subthreshold current [V-1] DEL Body effect linearization coefficient [-] DELVG Body effect linearization coefficient independent of Vgs [V-1] L0 Critical length [m] L Channel length [m] EPS Output conductance factor if L0>L [m] KE Output conductance factor if L0<L [Vm] DT_KP Mobility thermal coefficient [-] DT_VT Thermal coefficient of threshold voltage [°C-1] V TH V T0 η V DS DVVT T T NOM – () ⋅ + ⋅ – = - VR V TH 2XNU TH ⋅⋅ – = U TH KT ⋅ q -------------- = V gg V TH 2XNU TH e V gs VR – 2XN U TH ⋅ ⋅ ------------------------------------- ⋅⋅ ⋅ + V gs ⎩ ⎪ ⎨ ⎪ ⎧ = |
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