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AN3413 数据表(PDF) 5 Page - STMicroelectronics |
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AN3413 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 18 page ![]() DocID018933 Rev 2 5/18 AN3413 Application description 17 The firmware associated with this application note also provides a demonstration of the touch sensing functionality available on STM32L1xx DISCOVERY. The touch sensing electrodes can be configured either as a linear touch sensor to perform linear sensing of finger position displayed as a percentage on the LCD, or, it can be configured as a group of four independent touchkeys. It also includes a manufacturing test mode for performing a quick diagnosis of the STM32L1xx DISCOVERY related to this application example. See Section 1.5.3: Manufacturing test for details regarding the test activation and for an explanation of the different test modes. 1.4.2 IDD measurement principle The STM32L1xx DISCOVERY IDD measurement circuitry consists of measuring the high side shunt voltage value V at the terminals of a high precision serial resistor (1%) inserted between the +3V3 power supply and the VDD pin of the MCU. Depending on the device power modes, the application uses R or [2000 + 2] x R as the equivalent resistor value by closing or opening K1. In Run mode, the current is in the range of mA, K1 is closed, and the equivalent resistor is R. In low power modes, the current is in the µA range, K1 is opened, and the equivalent resistance is 2002 x R. Figure 2. IDD measurement equivalent circuitry This resistor is connected between the differential inputs of a high-side current sense operational amplifier (A) with a fixed gain that amplifies the voltage (V) present on the resistors. A sample and hold stage is placed at the operational amplifier output and is then MS19811V1 A 2R 2k +3V3 VDD STM32L15x GND +3 V3 Q14 Q13 EN Counter PC13 PA0 LP wake-up PA4 IDD meas Gain = 50 C K1 K2 V S IDD |
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