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TSM2NB60CPROG 数据表(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

部件名 TSM2NB60CPROG
功能描述  600V N-Channel Power MOSFET
PDF  10 Pages
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制造商  TSC [Taiwan Semiconductor Company, Ltd]
网页  http://www.taiwansemi.com
标志 TSC - Taiwan Semiconductor Company, Ltd

TSM2NB60CPROG 数据表(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSM2NB60
600V N-Channel Power MOSFET
2/10
Version: C12
Thermal Performance
Parameter
Symbol
Limit
Unit
IPAK/DPAK
ITO-220
TO-220
Thermal Resistance - Junction to Case
RӨJC
2.87
5
1.78
oC/W
Thermal Resistance - Junction to Ambient
RӨJA
110
62.5
62.5
oC/W
Electrical Specifications (Ta = 25
oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
600
--
--
V
Drain-Source On-State Resistance
VGS = 10V, ID = 1A
RDS(ON)
--
3.9
4.4
Ω
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
2.5
3.6
4.5
V
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
IDSS
--
--
10
uA
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
nA
Forward Transfer Conductance
VDS = 40V, ID = 1A
gfs
--
1.5
--
S
Dynamic
Total Gate Charge
VDS = 480V, ID = 2A,
VGS = 10V
(Note 4,5)
Qg
--
9.4
--
nC
Gate-Source Charge
Qgs
--
2.2
--
Gate-Drain Charge
Qgd
--
4.7
--
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Ciss
--
249
--
pF
Output Capacitance
Coss
--
30.7
--
Reverse Transfer Capacitance
Crss
--
5
--
Switching
Turn-On Delay Time
VGS = 10V, ID = 2A,
VDD = 300V, RG =25Ω
(Note 4,5)
td(on)
--
9.1
--
nS
Turn-On Rise Time
tr
--
9.8
--
Turn-Off Delay Time
td(off)
--
17.4
--
Turn-Off Fall Time
tf
--
12.4
--
Source-Drain Diode Ratings and Characteristic
Source Current
Integral reverse diode in
the MOSFET
IS
--
--
2
A
Source Current (Pulse)
ISM
--
--
8
A
Diode Forward Voltage
IS = 2A, VGS = 0V
VSD
--
0.9
1.4
V
Reverse Recovery Time
VGS = 0V, IS =2A,
dIF/dt = 100A/us
tfr
--
490
--
nS
Reverse Recovery Charge
Qfr
--
0.8
--
uC
Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
Note 2: VDD = 50V, IAS=2A, L=25mH, RG =25Ω, Starting TJ=25ºC
Note 3: ISD≤2A, di/dt≤200A/uS, VDD≤BVDSS, Starting TJ=25ºC
Note 4: Pulse test: pulse width ≤300uS, duty cycle ≤2%
Note 5: Essentially Independent of Operating Temperature



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