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TSM2NB60CPROG 数据表(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM2NB60CPROG 数据表(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 10 page ![]() TSM2NB60 600V N-Channel Power MOSFET 1/10 Version: C12 TO-220 ITO-220 PRODUCT SUMMARY VDS (V) RDS(on)( Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description The TSM2NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. TO-251 (IPAK) TO-252 (DPAK) Features ● Low RDS(ON) 3.9Ω (Typ.) ● Low gate charge typical @ 9.5nC (Typ.) ● Low Crss typical @ 5pF (Typ.) ● 100% Avalanche Tested Ordering Information Part No. Package Packing TSM2NB60CH C5G TO-251 75pcs / Tube TSM2NB60CP ROG TO-252 2.5Kpcs / 13” Reel TSM2NB60CZ C0 TO-220 50pcs / Tube TSM2NB60CI C0 ITO-220 50pcs / Tube Note: “G” denotes for Halogen Free Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit IPAK/DPAK ITO-220 TO-220 Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current Tc = 25ºC ID 2 A Tc = 100ºC 1.35 A Pulsed Drain Current * IDM 8 A Single Pulse Avalanche Energy (Note 2) EAS 55 mJ Avalanche Current (Repetitive) (Note 1) IAR 2 A Repetitive Avalanche Energy (Note 1) EAR 4.4 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Total Power Dissipation @ TC = 25 oC PTOT 44 25 70 W Operating Junction Temperature TJ 150 ºC Storage Temperature Range TSTG -55 to +150 oC Note: Limited by maximum junction temperature Block Diagram N-Channel MOSFET Pin Definition: 1. Gate 2. Drain 3. Source |
类似零件编号 - TSM2NB60CPROG |
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类似说明 - TSM2NB60CPROG |
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