2

1

3

Originative New Design

Superior Avalanche Rugged Technology

Robust Gate Oxide Technology

Very Low Intrinsic Capacitances

Excellent Switching Characteristics

Unrivalled Gate Charge : 29 nC (Typ.)

Extended Safe Operating Area

Lower R

DS(ON)

100% Avalanche Tested

Thermal Resistance Characteristics

FEATURES

Absolute Maximum Ratings

T

unless otherwise specified

TO-220

1.Gate 2. Drain 3. Source

HFP640G

200V N-Channel MOSFET

Symbol

Parameter

Typ.

Max.

Units

R

JC

Junction-to-Case

--

1.3

/W

R

CS

Case-to-Sink

0.5

--

R

JA

Junction-to-Ambient

--

62.5

Feb 2015

Symbol

Parameter

Value

Units

V

DSS

Drain-Source Voltage

200

V

I

D

Drain Current

– Continuous (T

)

18

A

Drain Current

– Continuous (T

)

11.4

A

I

DM

Drain Current

– Pulsed

(Note 1)

72

A

V

GS

Gate-Source Voltage

30

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

780

mJ

I

AR

Avalanche Current

(Note 1)

18

A

E

AR

Repetitive Avalanche Energy

(Note 1)

9.6

mJ

P

D

Power Dissipation (T

)

- Derate above 25

96

W

0.77

W/

T

Operating and Storage Temperature Range

-55 to +150

T

L

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

BV

R

DS(on) typ

I