HFP640G datasheet(3/8 Pages) SEMIHOW

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Typical Characteristics

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

1020

3040

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

GS = 20V

GS = 10V

Note : T

J = 25

D, Drain Current [A]

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

* Notes :

1. 300us Pulse Test

2. T

C = 25

DS, Drain-Source Voltage [V]

0.0

0.4

0.8

1.2

1.6

2.0

0.1

* Notes :

1. V

GS= 0V

2. 300us Pulse Test

SD, Source-Drain Voltage [V]

150

2468

0.1

100

-55

* Notes :

1. V

DS= 30V

2. 300us Pulse Test

GS, Gate-Source Voltage [V]

150

-1

500

1000

1500

2000

2500

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

DS = 100V

DS = 40V

DS = 160V

* Note : I

D = 18.0 A

G, Total Gate Charge [nC]

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