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HTB1A80AS 数据表(PDF) 1 Page - SemiHow Co.,Ltd. |
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HTB1A80AS 数据表(HTML) 1 Page - SemiHow Co.,Ltd. |
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1 / 5 page ![]() HTB1A80AS 1A TRIAC VDRM = 1000 V IT(RMS) = 1 A ITSM = 11 A IGT = 5mA Symbol Absolute Maximum Ratings (TJ=25 unless otherwise specified ) Symbol Parameter Conditions Ratings Unit VDRM Repetitive Peak Off-State Voltage Sine wave, 50/60Hz, Gate open 1000 V VRRM Repetitive Peak Reverse Voltage 1000 V VDSM Non-Repetitive Surge Peak Off-State Voltage 1100 V VRSM Non-Repetitive Peak Reverse Voltage 1100 V IT(RMS) R.M.S. On-State Current Full sine wave, TC = 57oC1 A ITSM Non-Repetitive Surge Peak On-State Current Full sine wave, 50Hz/60Hz 10/11 A I2t Fusing Current t = 10ms 1.12 A2S PGM Forward Peak Gate Power Dissipation TJ = 125 C 1W PG(AV) Forward Average Gate Power Dissipation TJ = 125 C 1W IGM Peak Gate Current tp=20us, TJ = 125 C 1A TJ Operating Junction Temperature -40~+125 oC TSTG Storage Temperature -40~+150 oC FEATURES Repetitive Peak Off-State Voltage : 1000V R.M.S On–State Current (IT(RMS) = 1A) Gate Trigger Current : 5mA dV/dt 400V/us General Description Intended for use in AC static switching and industrial control systems, driving low power highly inductive load like solenoid, pump, fan ad micro-motor. T1 T2 G TO-92 |
类似零件编号 - HTB1A80AS |
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类似说明 - HTB1A80AS |
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