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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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HTB1A80AS 数据表(PDF) 2 Page - SemiHow Co.,Ltd. |
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HTB1A80AS 数据表(HTML) 2 Page - SemiHow Co.,Ltd. |
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2 / 5 page  Thermal Characteristics Electrical Characteristics (T J=25 unless otherwise specified ) Symbol Parameter Conditions Min Typ Max Unit IDRM Repetitive Peak Off-State Current VD = VDRM TJ=25oC- - 10 uA TJ=125oC - - 500 uA IRRM Repetitive Peak Reverse Current VR = VRRM TJ=25oC- - 10 uA TJ=125oC - - 500 uA IGT Gate Trigger Current VD = 12V, RL=30 1+ - - 3 mA 1-, 3- - - 5 mA VGT Gate Trigger Voltage VD = 12V, RL=30 1+, 1-, 3- - - 1.4 V VGD Non-Trigger Gate Voltage VD = 2/3VDRM, RL=3.3K , TJ=125oC 0.2 - - V IL Latching Current IG= 1.2IGT 1+, 3- - - 15 mA 1- - - 25 mA IH Holding Current IT= 100mA - - 10 mA VTM Peak On-State Voltage IT = 1.4A, tp = 380uS - - 1.5 V dv/dt Critical Rate of Rise of Off-State Voltage VD = 2/3 VDRM, Gate open, TJ=125oC 400 - - V/us Symbol Parameter Conditions Min Typ Max Unit R JC Thermal Resistance Junction to Case 60 o C/W |
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