Part Description

Specifications subject to change without notice.

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2

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3.4 V, 1.2 W RF Power Amplifier IC

MA02107AF

V 1.0

Ω

Parameter

Test Conditions

Units

Min

Typ

Max

Frequency

MHz

900

942

Output Power

dBm

30.0

30.8

Power Gain

dB

30.8

Power Added Efficiency

%

45

55

Input Return Loss

dB

10

15

2

dBc

-35

-29

3

dBc

-50

-45

Thermal Resistance

3

41

Stability

= 3 MHz max hold

All spurs < -60 dBc

1. Ts is the temperature measured at the soldering point of pin 13.

3. The output is externally matched to 50 ohms.

Absolute Maximum Ratings

1

Parameter

Absolute Maximum

Max Input Power

+6 dBm

Operating Voltages

+5.0 volts

Operating Temperature, Ts

-40 °C to +70 °C

Channel Temperature

+150 °C

Storage Temperature

-40 °C to +150 °C

1. Exceeding any one or combination of these limits may cause permanent damage.

Application Information

Static Sensitivity

Gallium arsenide integrated circuits are ESD sensitive and can be damaged by static electricity. Use proper ESD precautions when

handling these devices.

Board Layout

Sample Test Board

50 Ohm Lead Transition