RF Power Amplifier IC for 2.4 GHz ISM

MA02303GJ

Specifications subject to change without notice.

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0

10

20

30

40

50

60

0

50

100

150

200

250

300

-10

-5

0

5

PAE

P

OUT

I

DD

P

IN

(dBm)

V

DD1, 2, 3

= 3.3 V

F = 2450 MHz

0

10

20

30

40

50

60

0.05

0.10

0.15

0.20

0.25

0.30

0.35

1

2

3

4

5

PAE

I

DD

P

OUT

P

IN

(dBm)

I

DD

PAE

P

OUT

P

IN

= -2 dBm

F = 2450 MHz

Typical Characteristics

(Measured data from process nominal devices)

Output Power, Drain Current and Efficiency

vs. Supply Voltage

3

0

10

20

30

40

50

60

-30

-25

-20

-15

-10

-5

0

2200

2300

2400

2500

2600

PAE

P

OUT

IRL

FREQUENCY (MHz)

P

IN

= - 2 dBm

V

DD

= 3.3 V

0

5

10

15

20

25

30

35

0

50

100

150

200

250

300

350

-50

0

50

100

P

OUT

I

DD

Temperature, T

S

(

P

IN

= - 2 dBm

V

DD

- 3.0 V

F = 2450 MHz

Output Power, Drain Current and

Efficiency vs. Input Power

Output Power, Input Return Loss and

Efficiency vs. Frequency

Output Power and Drain Current vs.

0

2

4

6

8

10

12

0

50

100

150

200

250

300

-10

-5

0

5

PAE

P

OUT

I

DD

P

IN

(dBm)

V

DD1, 2

= 3.3 V, V

DD3

= 0.0 V

F = 2450 MHz

Output Power, and Drain Current vs. Input

Power for Low Current “Bypass” Mode

0

5

10

15

20

25

30

0

100

200

300

400

500

600

0.0

0.5

1.0

1.5

2.0

2.5

3.0

P

OUT

I

DD1

I

DD2

V

DD1

(V)

Output Power, Drain Current and Efficiency