Specification Subject to Change Without Notice

M/A-COM, Inc. _______________________________________________________________________________

1

North America: Tel. (800) 366-2266

Fax (800) 618-8883

þ

Asia/Pacific:

Tel. +81 3 3263 8761

Fax +81 3 3263 8769

þ

1Europe: Tel. +44 (1344) 869 595

Fax +44 (1344) 300 020

Features

• Broad Bandwidth

• Specified up to 20 GHz

• Usable to 26.5 GHz

• Low Insertion Loss / High Isolation

• Rugged, Fully Monolithic, Glass Encapsulated

Construction

Description

The MA4SW110, 210 and 310 series are broad band

monolithic switches using series and shunt connected

silicon PIN diodes. They are designed for use as small

signal, high performance switches in applications up to

26.5 Ghz. They provide performance levels superior to

those realized by hybrid MIC designs incorporating

beam lead and PIN chip diodes that require chip and

wire assembly.

These

switches

are

fabricated

using

M/A-COM’s

patented HMIC

TM

(Heterolithic Microwave Integrated

Circuit) process, US Patent 5,268,310.

This process

allows the incorporation of silicon pedestals that form

series and shunt diodes or vias by imbedding them in

low loss glass. By using small spacing between

elements, this combination of silicon and glass gives

HMIC devices low loss and high isolation performance

through low millimeter frequencies.

Large bond pads facilitate the use of low inductance

ribbon leads, while gold backside metalization allows for

manual or automatic chip bonding via 80/20 AuSn solder

or conductive epoxy

1. Exceeding these limits may cause permanent damage.

MA4SW110 (SPST)

Broadband Monolithic

Silicon PIN Diode Switches

Rev 5.0

MA4SW110

MA4SW210

MA4SW310

MA4SW210 (SPDT)

MA4SW310 (SP3T)

Parameter

Absolute Maximum

Operating Temperature

-65

Storage Temperature

-65

Applied Voltage (Reverse)

50 volts

RF Incident Power

+30 dBm

Bias Current

50mA