Monolithic Pin Diode Switches

MA4SW110, MA4SW210, MA4SW310

V5.00

Specification Subject to Change Without Notice

6

______________________________________________________________________________ M/A-COM, Inc.

North America: Tel. (800) 366-2266

Fax (800) 618-8883

þ

Asia/Pacific:

Tel. +81 3 3263 8761

Fax +81 3 3263 8769

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Europe: Tel. +44 (1344) 869 595

Fax +44 (1344) 300 020

Wire Bonding

Top contact is 2.5 µM thick gold. Yellow areas in chip,

outline

drawings

below

indicate

bonding

pads.Thermosonic

wedge

bonding

using

0.003”

x

0.00025”

ribbon

or

0.001”

diameter

gold

wire

is

recommended. A heatstage temperature of 150

force of 18 to 22 grams should be used. Ultrasonic energy

should be adjusted to the minimum required to achieve a

good bond.

RF bonds should be kept as short as

possible.

Mounting

These chips have TiPtAu back metal. Gold thickness is

1.0 µM. They can be die mounted with a gold-tin eutectic

solder preform or conductive epoxy.

Mounting surface

must be clean and flat.

Eutectic Die Attachment

An 80/20 gold-tin eutectic solder preform is recommended

with a work surface temperature of 255

temperature of 265

temperature should be 290

exposed to temperatures greater than 320

20 seconds. No more than three seconds should be required

for attachment.

Epoxy Die Attachment

Assembly should be preheated to 125 -150

amount of epoxy should be used. A thin epoxy fillet should

be visible around the perimeter of the chip after placement.

Cure epoxy per manufacturer’s schedule.

Chip Outline Drawing

MA4SW110

DIM

INCHES

MM

MIN.

MAX.

MIN.

MAX.

A

0.014

0.018

0.35

0.45

B

0.025

0.029

0.64

0.74

C

0.008 REF

0.20 REF

D

0.004

0.006

0.10

0.15

E

0.004 REF

0.10 REF

F

0.003 REF

0.08 REF

G

0.003 REF

0.08 REF

H

0.020 REF

0.52 REF