MRF1150MA datasheet(1/4 Pages) MACOM

部件名	MRF1150MA

功能描述	MICROWAVE POWER TRANSISTOR NPN SILICON

PDF	4 Pages

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制造商	MACOM [Tyco Electronics]

网页	http://www.macom.com

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1 / 4 page

The RF Line

Microwave Pulse

Power Transistor

Designed for Class B and C common base amplifier applications in short

pulse TACAN, IFF, and DME transmitters.

• Guaranteed Performance @ 1090 MHz, 50 Vdc

Output Power = 150 Watts Peak

Minimum Gain = 7.8 dB

• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR

• Industry Standard Package

• Nitride Passivated

• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal

Migration

• Internal Input Matching for Broadband Operation

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Base Voltage

VCBO

70

Vdc

Emitter–Base Voltage

VEBO

4.0

Vdc

Collector Current — Peak (1)

IC

12

Adc

Total Device Dissipation @ TC = 25°C (1) (2)

Derate above 25

°C

PD

583

3.33

Watts

W/

°C

Storage Temperature Range

Tstg

–65 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case (3)

RθJC

0.3

°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 50 mAdc, VBE = 0)

V(BR)CES

70

—

Vdc

Collector–Base Breakdown Voltage

(IC = 50 mAdc, IE = 0)

V(BR)CBO

70

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 5.0 mAdc, IC = 0)

V(BR)EBO

4.0

—

Vdc

Collector Cutoff Current

(VCB = 50 Vdc, IE = 0)

ICBO

—

10

mAdc

ON CHARACTERISTICS

DC Current Gain (4)

(IC = 5.0 Adc, VCE = 5.0 Vdc)

hFE

10

30

—

NOTES:

(continued)

1. Pulse Width = 10

µs, Duty Cycle = 1%.

2. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.

3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.

4. 80

µs Pulse on Tektronix 576 or equivalent.

MRF1150MA

150 W PEAK, 960–1215 MHz

MICROWAVE POWER

TRANSISTOR

NPN SILICON

CASE 332–04, STYLE 1

Order this document

by MRF1150MA/D

SEMICONDUCTOR TECHNICAL DATA

1

REV 9

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