MRF1150MA datasheet(2/4 Pages) MACOM

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ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 50 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

FUNCTIONAL TESTS (Pulse Width = 10

µs, Duty Cycle = 1.0%)

Common–Base Amplifier Power Gain

(VCC = 50 Vdc, Pout = 150 W pk, f = 1090 MHz)

GPB

7.8

9.8

—

Collector Efficiency

(VCC = 50 Vdc, Pout = 150 W pk, f = 1090 MHz)

—

Load Mismatch

(VCC = 50 Vdc, Pout = 150 W pk, f = 1090 MHz,

VSWR = 10:1 All Phase Angles)

No Degradation in Power Output

Figure 1. 1090 MHz Test Circuit

C1, C2 — 220 pF Chip Capacitor, 100–mil ATC

C3 — 0.1

µF/100 V

C4 — 47

µF/75 V Electrolytic

L1, L2 — 3 Turns #18 AWG, 1/8

″ ID

Z1–Z10 — Distributed Microstrip Elements — See Photomaster

Board Material — 0.031

″ Thick Teflon–Fiberglass, εr = 2.5

OUTPUT

DUT

INPUT

VCC = 50 Vdc

Z10

Figure 2. Output Power versus Input Power

Figure 3. Output Power versus Frequency

200

150

100

510

Pin, INPUT POWER (WATTS pk)

f, FREQUENCY (MHz)

VCC = 50 V

tp = 10 µs

D = 1%

Pin = 20 W pk

VCC = 50 V

tp = 10 µs

D = 1%

f = 960 MHz

1090 MHz

1215 MHz

200

150

100

960

1090

1215

17.5 W pk

12.5 W pk

10 W pk

15 W pk

REV 9

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