RFHA1027 datasheet(2/10 Pages) RFMD

2 / 10 page

RF Micro Devices Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421

DS140204

For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.

The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of

third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended

application circuitry and specifications at any time without prior notice.

2 of 10

RFHA1027

Absolute Maximum Ratings

Parameter

Rating

Unit

Drain Voltage (VD)

150

Gate Voltage (VG)

-8 to 2

Operating Voltage

Ruggedness (VSWR)

10:1

Storage Temperature Range

-55 to +125

°C

Operating Temperature Range (TC)

-40 to +85

°C

Operating Junction Temperature (TJ)

200

°C

Human Body Model

Class 1A

MTTF (TJ < 200°C, 95% Confidence Limits)*

1.8E + 07

Hours

MTTF (TJ < 250°C, 95% Confidence Limits)*

1.1E + 05

Hours

Thermal Resistance, RTH (Junction to Case)

°C/W

TC = 85°C, DC Bias Only

0.90

TC = 85°C, 100μs Pulse, 10% Duty Cycle

TC = 85°C, 1ms Pulse, 10% Duty Cycle

0.13

0.25

Caution! ESD sensitive device.

RoHS (Restriction of Hazardous

Substances): Compliant per EU Directive

2011/65/EU.

Exceeding any one or a combination of the Absolute

Maximum Rating conditions may cause permanent

damage to the device. Extended application of Absolute

Maximum Rating conditions to the device may reduce

device reliability. Specified typical performance or

functional operation of the device under Absolute

Maximum Rating conditions is not implied.

* MTTF

– median time to failure for wear-out failure mode (30% I

DSS degradation) which is determined by the technology process reliability. Refer to

product qualification report for FIT(random) failure rate.

Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current

must not exceed the maximum operating values specified in the table above.

Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and TC = TCASE

Nominal Operating Parameters

Parameter

Specification

Unit

Condition

Min

Typ

Max

Recommended Operating

Conditions

Drain Voltage (VDSQ)

Gate Voltage (VGSQ)

-8

-3.3

-2

Drain Bias Current

750

Frequency of Operation

1200

1400

MHz

DC Functional Test

IG(OFF) – Gate Leakage

VG = -8V, VD = 0V

ID(OFF) – Drain Leakage

VG = -8V, VD = 50V

VGS(TH) – Threshold Voltage

-3.5

VD = 50V, ID = 40mA

VDS(ON) – Drain Voltage at high

current

0.43

VG = 0V, ID = 1.5A

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