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RFHA1027 数据表(PDF) 3 Page - RF Micro Devices

部件名 RFHA1027
功能描述  500W GaN Wide-Band Pulsed Power Amplifier
PDF  10 Pages
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制造商  RFMD [RF Micro Devices]
网页  http://www.rfmd.com
标志 RFMD - RF Micro Devices

RFHA1027 数据表(HTML) 3 Page - RF Micro Devices

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RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421
DS140204
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
3 of 10
RFHA1027
Parameter
Specification
Unit
Condition
Min
Typ
Max
RF Functional Test
Test Conditions: PW = 1ms, DC = 10%, VDSQ = 50V, IDQ = 750mA,
T = 25ºC, Performance in a standard tuned test fixture.
Power Gain
12.5
13.6
dB
f = 1200MHz, PIN = 44dBm
Input Return Loss
-5
dB
Output Power
56.5
57.6
dBm
Drain Efficiency
53
%
Power Gain
12.5
13.3
dB
f = 1300MHz, PIN = 44dBm
Input Return Loss
-5
dB
Output Power
56.5
57.3
dBm
Drain Efficiency
55
%
Power Gain
12.5
12.8
dB
f = 1400MHz, PIN = 44dBm
Input Return Loss
-5
dB
Output Power
56.5
56.8
dBm
Drain Efficiency
54
%
RF Typical Performance
Frequency Range
1200
1400
MHz
Low Power Gain
15.8
dB
POUT = 36dBm [1,2]
Power Gain
13.3
dB
PIN = 44dBm [1,2]
Gain Variation with Temperature
-0.019
dB/°C
At peak output power [1,2]
Output Power (PSAT)
57
dBm
Peak output power [1,2]
500
W
Drain Efficiency
54
%
At peak output power [1,2]
[1] Test Conditions: PW = 1ms, DC = 10%, VDSQ = 50V, IDQ = 750mA, T = 25ºC.
[2] Performance in a standard tuned test fixture.



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