ZXTC4591AMC

Document number: DS31925 Rev. 4 - 2

2 of 9

www.diodes.com

October 2012

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A Product Line of

Diodes Incorporated

ZXTC4591AMC

Parameter

Symbol

NPN

PNP

Unit

Collector-Base Voltage

40

-40

V

Collector-Emitter Voltage

40

-40

Emitter-Base Voltage

7

-7

Peak Pulse Current

3

-3

A

Continuous Collector Current

(Notes 6 & 9)

2

-1.5

(Notes 7 & 9)

2.5

-2

Base Current

300

mA

Characteristic

Symbol

NPN

PNP

Unit

Power Dissipation

Linear Derating Factor

(Notes 6 & 9)

1.5

12

W

mW/

°C

(Notes 7 & 9)

2.45

19.6

(Notes 8 & 9)

1.13

8

(Notes 8 & 10)

1.7

13.6

Thermal Resistance, Junction to Ambient

(Notes 6 & 9)

83.3

°C/W

(Notes 7 & 9)

51.0

(Notes 8 & 9)

111

(Notes 8 & 10)

73.5

Thermal Resistance, Junction to Lead

(Notes 9 & 11)

17.1

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

6. For a dual device surface mounted on 28mm x 28mm (8cm

measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.

7. Same as note (6), except the device is measured at t <5 sec.

8. Same as note (6), except the device is surface mounted on 31mm x 31mm (10cm

9. For a dual device with one active die.

10. For dual device with 2 active die running at equal power.

11. Thermal resistance from junction to solder-point (on the exposed collector pad).