ZXTC4591AMC_15 datasheet(4/9 Pages) DIODES

4 / 9 page

ZXTC4591AMC

Document number: DS31925 Rev. 4 - 2

4 of 9

www.diodes.com

October 2012

A Product Line of

Diodes Incorporated

ZXTC4591AMC

NPN - Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

IC = 100µA

Collector-Emitter Breakdown Voltage (Note 12)

BVCEO

IC = 10mA

Emitter-Base Breakdown Voltage

BVEBO

IE = 100µA

Collector Cutoff Current

ICBO

100

VCB = 30V

Emitter Cutoff Current

IEBO

100

nA

VEB = 4V

Collector Emitter Cutoff Current

ICES

100

VCE = 30V

Static Forward Current Transfer Ratio (Note 12)

hFE

300

200

900

IC = 1mA, VCE = 5V

IC = 500mA, VCE = 5V

IC = 1A, VCE = 5V

IC = 2A, VCE = 5V

Collector-Emitter Saturation Voltage (Note 12)

VCE(sat)

300

500

IC = 0.5A, IB = 50mA

IC = 1A, IB = 100mA

Base-Emitter Turn-On Voltage (Note 12)

VBE(on)

1.0

IC = 1A, VCE = 5V

Base-Emitter Saturation Voltage (Note 12)

VBE(sat)

1.1

IC = 1A, IB = 100mA

Output Capacitance

Cobo

VCB = 10V, f = 1MHz

Transition Frequency

150

MHz

VCE = 10V, IC = 50mA,

f = 100MHz

Notes:

12. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%.

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