Features

1 of 12

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

InP HBT

LDMOS

RF MEMS

SPF5122Z

50MHz to 4000MHz, GaAs pHEMT LOW NOISE

MMIC AMPLIFIER

The SPF5122Z is a high performance pHEMT MMIC LNA designed for

operation from 50MHz to 4000MHz. The on-chip active bias network pro-

vides stable current over temperature and process threshold voltage vari-

ations. The SPF5122Z offers ultra-low noise figure and high linearity

performance in a gain block configuration. Its single-supply operation and

integrated matching networks make implementation remarkably simple. A

high maximum input power specification make it ideal for high dynamic

range receivers.

Gain and NF versus Frequency

Broadband Application Circuit (5V, 90mA)

1.0

4.0

7.0

10.0

13.0

16.0

19.0

22.0

25.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Frequency (GHz)

0.00

0.50

1.00

1.50

2.00

2.50

3.00

3.50

4.00

Gain

NF



Ultra-Low Noise Figure=0.60dB

at 900MHz



Gain=18.9dB at 900MHz



High Linearity: OIP3=40.5dBm

at 1900MHz



Channel Power=13.4dBm (-

65dBc IS95 ACPR, 880MHz)





Single-Supply Operation: 5V at



Flexible Biasing Options: 3-5V,

Adjustable Current



Broadband Internal Matching

Applications



Cellular, PCS, W-CDMA, ISM,

WiMAX Receivers



PA Driver Amplifier



Low Noise, High Linearity Gain

Block Applications

DS110408



SPF5122Z

50MHz to

4000MHz,

GaAs pHEMT

Low Noise

MMIC Ampli-

fier

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Power Gain

17.2

18.9

20.2

dB

0.9GHz

11.2

12.2

14.4

dB

1.96GHz

Output Power at 1dB Compression

20.8

22.8

dBm

0.9GHz

21.4

23.4

dBm

1.9GHz

Output Third Order Intercept Point

35.1

38.1

dBm

0.9GHz

37.2

40.5

dBm

1.9GHz

Noise Figure

0.59

0.85

dB

0.9GHz

0.65

0.9

dB

1.9GHz

Input Return Loss

10

14.3

dB

0.9 GHz

21

dB

1.9GHz

Output Return Loss

14

17

dB

0.9GHz

13

dB

1.9GHz

Reverse Isolation

24.1

dB

0.9GHz

18.4

dB

1.9GHz

Device Operating Voltage

5.00

5.25

V

Device Operating Current

75

90

105

mA

Quiescent

Thermal Resistance

65

°C/W

Junction to lead