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SPF5122ZPCK1 数据表(PDF) 2 Page - RF Micro Devices |
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SPF5122ZPCK1 数据表(HTML) 2 Page - RF Micro Devices |
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2 / 12 page ![]() 2 of 12 DS110408 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SPF5122Z Typical RF Performance - Broadband Application Circuit with VD=5V, ID=90mA 1. Input RL can be improved in the 800MHz to 1000MHz band by adding a series inductor between the DC block and device input. Typical RF Performance - Broadband Application Circuit with VD=3V, ID=58mA 1. Input RL can be improved in the 800MHz to 1000MHz band by adding a series inductor between the DC block and device input. Absolute Maximum Ratings Parameter Rating Unit Max Device Current (lD) 120 mA Max Device Voltage (VD)5.5 V Max RF Input Power 27 dBm Max Dissipated Power 660 mW Max Junction Temperature (TJ) 150 °C Operating Temperature Range (TL) -40 to + 85 °C Max Storage Temperature -65 to +150 °C ESD Rating - Human Body Model (HBM) Class 1B Moisture Sensitivity Level (MSL) MSL 1 Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD Parameter Unit 0.1 GHz* 0.4 GHz 0.9 GHz 1.5 GHz 1.9 GHz 2.2 GHz 2.5 GHz 3.5 GHz 3.8 GHz Small Signal Gain dB 27.0 24.0 19.0 15.0 13.0 12.0 11.0 6.0 7.0 Noise Figure dB 0.42 0.47 0.59 0.70 0.64 0.73 0.86 1.35 1.27 Output IP3 dBm 33.0 36.0 38.0 39.5 40.5 41.0 41.5 40.5 41.5 Output P1dB dBm 22.3 22.7 23.0 23.2 23.4 23.7 23.9 22.2 22.9 Input Return Loss dB -9.5 -10.0 -14.5 -20.0 -21.0 -22.0 -22.5 -15.0 -11.5 Output Return Loss dB -29.0 -19.5 -17.0 -14.0 -13.0 -12.5 -12.5 -7.5 -15.5 Reverse Isolation dB -32.0 -29.0 -24.0 -20.0 -18.5 -17.5 -16.5 -15.5 -13.5 Test Conditions: VD=5V, IDQ=90mA, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, TL=25°C, ZS=ZL=50 *Bias Tee Data @ 100MHz Parameter Unit 0.1 GHz* 0.4 GHz 0.9 GHz 1.5 GHz 1.9 GHz 2.2 GHz 2.5 GHz 3.5 GHz 3.8 GHz Small Signal Gain dB 26.0 23.0 18.5 14.5 12.5 11.5 10.5 6.0 6.5 Noise Figure dB 0.35 0.44 0.58 0.65 0.61 0.69 0.79 1.25 1.19 Output IP3 dBm 31.5 33.0 34.5 36.0 36.5 37.0 37.5 37.0 37.5 Output P1dB dBm 18.8 18.9 19.1 19.4 19.9 20.2 20.1 18.9 19.2 Input Return Loss dB -8.0 -9.0 -13.0 -16.5 -18.5 -19.0 -19.0 -13.5 -10.0 Output Return Loss dB -26.0 -28.5 -23.5 -18.0 -16.5 -16.0 -15.5 -9.0 -14.0 Reverse Isolation dB -31.0 -28.0 -23.0 -19.0 -17.5 -16.0 -15.0 -14.5 -12.5 Test Conditions: VD=3V, IDQ=58mA, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, TL=25°C, ZS=ZL=50, *Bias Tee Data @ 100MHz Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. |
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